Evaluation of Operating Margin and Switching Probability of Voltage-Controlled Magnetic Anisotropy Magnetic Tunnel Junctions

  1. Song, J.
  2. Ahmed, I.
  3. Zhao, Z.
  4. Zhang, D.
  5. Sapatnekar, S.S.
  6. Wang, J.-P.
  7. Kim, C.H.
Revue:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

ISSN: 2329-9231

Année de publication: 2018

Volumen: 4

Número: 2

Pages: 76-84

Type: Article

DOI: 10.1109/JXCDC.2018.2880205 GOOGLE SCHOLAR lock_openAccès ouvert editor

Objectifs de Développement Durable

La source de données: Scopus