Dislocation sources and slip band nucleation from indents on silicon wafers

  1. Wittge, J.
  2. Danilewsky, A.N.
  3. Allen, D.
  4. McNally, P.
  5. Li, Z.
  6. Baumbach, T.
  7. Gorostegui-Colinas, E.
  8. Garagorri, J.
  9. Elizalde, M.R.
  10. Jacques, D.
  11. Fossati, M.C.
  12. Bowen, D.K.
  13. Tanner, B.K.
Revue:
Journal of Applied Crystallography

ISSN: 0021-8898 1600-5767

Année de publication: 2010

Volumen: 43

Número: 5 PART 1

Pages: 1036-1039

Type: Article

DOI: 10.1107/S0021889810029894 GOOGLE SCHOLAR