Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

  1. Allen, D.
  2. Wittge, J.
  3. Zlotos, A.
  4. Gorostegui-Colinas, E.
  5. Garagorri, J.
  6. McNally, P.J.
  7. Danilewsky, A.N.
  8. Elizalde, M.R.
Journal:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Year of publication: 2010

Volume: 268

Issue: 3-4

Pages: 383-387

Type: Article

DOI: 10.1016/J.NIMB.2009.10.174 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus