Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors

  1. Astigarraga, D.
  2. Ibanez, F.M.
  3. Galarza, A.
  4. Echeverria, J.M.
  5. Unanue, I.
  6. Baraldi, P.
  7. Zio, E.
Revue:
IEEE Transactions on Power Electronics

ISSN: 0885-8993

Année de publication: 2016

Volumen: 31

Número: 11

Pages: 7953-7962

Type: Article

DOI: 10.1109/TPEL.2015.2512923 GOOGLE SCHOLAR
La source de données: Scopus