A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation

1. Urain, A.
2. Rio, D.D.
3. Ujan-Martinez, C.I.
4. Kantanen, M.
5. Berenguer, R.

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DOI: 10.1109/ACCESS.2024.3465850 GOOGLE SCHOLAR lock_openOpen access editor

Data source: Scopus