A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation

  1. Urain, A.
  2. Rio, D.D.
  3. Ujan-Martinez, C.I.
  4. Kantanen, M.
  5. Berenguer, R.
Revue:
IEEE Access

ISSN: 2169-3536

Année de publication: 2024

Volumen: 12

Pages: 138180-138191

Type: Article

DOI: 10.1109/ACCESS.2024.3465850 GOOGLE SCHOLAR lock_openAccès ouvert editor